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  <text x="60" y="58" fill="#1a1a1a" font-size="27" font-weight="800" letter-spacing="-0.5">Ce que la publication mesure réellement</text>
  <text x="60" y="90" fill="#6b6b6b" font-size="16" font-weight="500">GAAFET 2D Bi₂O₂Se / Bi₂SeO₅ — longueur de grille 30 nm</text>

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  <g font-size="14" font-weight="600" fill="#6b6b6b" letter-spacing="1">
    <text x="60" y="122">MOBILITÉ ÉLECTRONIQUE</text>
    <text x="60" y="240">PENTE SOUS LE SEUIL</text>
    <text x="60" y="358">TENSION DE FONCTIONNEMENT</text>
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  <g font-size="34" font-weight="800" fill="#1a1a1a">
    <text x="60" y="180">280 cm²·V⁻¹·s⁻¹</text>
    <text x="60" y="298">62 mV/dec</text>
    <text x="60" y="416">0,5 V</text>
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  <g font-size="15" font-weight="500" fill="#9a9a9a">
    <text x="60" y="208">mesurée sur le canal intégré</text>
    <text x="60" y="326">limite théorique idéale : 60 mV/dec à 300 K</text>
    <text x="60" y="444">contre 0,7 à 0,8 V pour un nœud silicium avancé</text>
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    <text x="940" y="122">COURANT À L'ÉTAT PASSANT</text>
    <text x="940" y="240">DÉLAI INTRINSÈQUE</text>
    <text x="940" y="358">PRODUIT ÉNERGIE-DÉLAI</text>
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    <text x="940" y="180">&gt; 1 mA/µm</text>
    <text x="940" y="298">1,9 ps</text>
    <text x="940" y="416">1,84 × 10⁻²⁷ J·s/µm</text>
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  <text x="60" y="514" fill="#6b6b6b" font-size="14" font-weight="500">Source : Tang, Jiang, Gao et al., « Low-power 2D gate-all-around logics via epitaxial monolithic 3D integration »,</text>
  <text x="60" y="536" fill="#6b6b6b" font-size="14" font-weight="500">Nature Materials, 2025. Correspondance : Hailin Peng et Lian-Mao Peng, Université de Pékin.</text>
  <text x="940" y="536" fill="#C73252" font-size="13" font-weight="700" text-anchor="end">Otium</text>
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